碳源炉
Details 细节
- Enable to obtain holes concentration from 1E18 to 1E20 cm-3 in GaAs
- Compatible with existing solid sources MBE systems
- Up to 2100°C operating Temperature range with long lifetime
- Excellent Uniformity
- Rapid flux variation
- Simplicity of operation
- Easy exchange of PG filament
- 使能在GaAs中获得1E18至1E20cm-3的空穴浓度
- 与现有固体源MBE系统兼容
- 高达2100°C的工作温度范围,使用寿命长
- 出色的均匀性
- 束流可快速变化
- 操作简单
- 易于更换PG灯丝
Presentation
The carbon sublimation doping cell is used for carbon doping. The flux of carbon is generated by sublimating a high purity Pyrolithic Graphite filament. The Pyrolithic Graphite filament is heated up by direct flow of high intensity current. The region surrounding the filament is made out of the same PG material to guarantee the high purity of the carbon flux.
In normal operation, the filament is heated up in the range of temperature 1700°C-2100°C. The low thermal mass of the filament permits to change rapidly the doping levels. The filament emission area gives an excellent lateral uniformity for 2” and 3” substrates. The Filament surrounding is built in high purity Pyrolithic graphite to prevent any cross contamination due to outgassing.
The source can be customized in order to fit on a large variety of vacuum systems. Electrical feedthroughs are water cooled in order to stand the current density applied to the source.
碳升华掺杂源用于碳掺杂。碳的束流是通过升华高纯度热解石墨丝而产生的。热解石墨丝通过高强度的直流电流加热。灯丝周围的区域由相同的PG材料制成,以保证碳束流的高纯度。
在正常操作中,灯丝在1700°C-2100°C的温度范围内加热。灯丝的低热容量允许快速改变掺杂水平。灯丝发射区域为2“和3”外延提供了极好的横向均匀性。灯丝周围由高纯度热解石墨制成,以防止因放气而产生的任何交叉污染。
该源可以定制,以适合各种各样的真空系统。电馈通是水冷的,以便承受施加到电源的电流密度。
Layout
Technical information
Cell characteristics | Carbon cell |
---|---|
Filament | Single high purity carbon (PG) |
Capacity | 800h @ 0,5Å/min // 10E19 cm-3 |
Mounting flange | CF 40 |
Water-cooled feedthroughs | Yes |
Water flow | 2-7 bar / 0,3 L/min |
Thermocouple | C-type |
Typical operating temperature | 1900°C (~72 A) – 2100°C (~80 A) |
Maximum outgassing temperature | 2300 °C (~100A) |
Power consumption | 1500 W |